Effect of Ga content on defect states in CuIn1-xGaxSe2 photovoltaic devices
Identifieur interne : 00E110 ( Main/Repository ); précédent : 00E109; suivant : 00E111Effect of Ga content on defect states in CuIn1-xGaxSe2 photovoltaic devices
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Abstract
Defects in the band gap of CuIn1-xGaxSe2 have been characterized using transient photocapacitance spectroscopy. The measured spectra clearly show response from a band of defects centered around 0.8 eV from the valence band edge as well as an exponential distribution of band tail states. Despite Ga contents ranging from Ga/(In+Ga)=0.0 to 0.8, the defect bandwidth and its position relative to the valence band remain constant. This defect band may act as an important recombination center, contributing to the decrease in device efficiency with increasing Ga content. © 2002 American Institute of Physics.
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Heath</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Physics, University of Oregon, Eugene</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Delaware</region></placeName><wicri:cityArea>Institute of Energy Conversion, University of Delaware, Newark</wicri:cityArea></affiliation></author><author><name sortKey="Cohen, J D" uniqKey="Cohen J">J. D. Cohen</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Physics, University of Oregon, Eugene</wicri:cityArea></affiliation></author><author><name sortKey="Shafarman, W N" uniqKey="Shafarman W">W. N. Shafarman</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Physics, University of Oregon, Eugene</wicri:cityArea></affiliation></author><author><name sortKey="Liao, D X" uniqKey="Liao D">D. X. 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The measured spectra clearly show response from a band of defects centered around 0.8 eV from the valence band edge as well as an exponential distribution of band tail states. Despite Ga contents ranging from Ga/(In+Ga)=0.0 to 0.8, the defect bandwidth and its position relative to the valence band remain constant. This defect band may act as an important recombination center, contributing to the decrease in device efficiency with increasing Ga content. © 2002 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>80</s2></fA05><fA06><s2>24</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Effect of Ga content on defect states in CuIn1-xGaxSe2 photovoltaic devices</s1></fA08><fA11 i1="01" i2="1"><s1>HEATH (J. T.)</s1></fA11><fA11 i1="02" i2="1"><s1>COHEN (J. D.)</s1></fA11><fA11 i1="03" i2="1"><s1>SHAFARMAN (W. 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